Operation and Modeling of the MOS Transistor 3e
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Opis: Operation and Modeling of the MOS Transistor 3e - Colin McAndrew, Yannis Tsividis

Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor-the key element of modern microelectronic chips.1. : SEMICONDUCTORS, JUNCTIONS, AND MOSFET OVERVIEW ; 1.1 INTRODUCTION ; 1.2 SEMICONDUCTORS ; 1.2.1 INTRINSIC SEMICONDUCTORS, FREE ELECTRONS, AND HOLES ; 1.2.2 EXTRINSIC SEMICONDUCTORS ; 1.2.3 EQUILIBRIUM IN THE ABSENCE OF ELECTRIC FIELD ; 1.2.4 EQUILIBRIUM IN THE PRESENCE OF ELECTRIC FIELD ; 1.2.5 SEMICONDUCTORS IN NONEQUILIBRIUM; QUASI-FERMI LEVELS ; 1.2.6 RELATIONS BETWEEN CHARGE DENSITY, ELECTRIC FIELD, AND ; POTENTIALS; POISSON'S EQUATION ; 1.3 CONDUCTION ; 1.3.1 TRANSIT TIME ; 1.3.2 DRIFT ; 1.3.3 DIFFUSION ; 1.3.4 TOTAL CURRENT ; 1.4 CONTACT POTENTIALS ; 1.5 THEPN JUNCTION ; 1.6 OVERVIEW OF THE MOS TRANSISTORS ; 1.6.1 BASIC STRUCTURE ; 1.6.2 A QUALITATIVE DESCRIPTION OF MOS TRANSISTOR OPERATION ; 1.6.3 A FLUID DYNAMICAL ANALOG ; 1.6.4 MOS TRANSISTOR CHARACTERISTICS ; 1.7 FABRICATION PROCESSES AND DEVICE FEATURES ; 1.8 A BRIEF OVERVIEW OF THIS BOOK ; REFERENCES ; PROBLEMS ; 2. : THE TWO TERMINAL MOS STRUCTURE ; 2.1 INTRODUCTION ; 2.2 THE FLAT-BAND VOLTAGE ; 2.3 POTENTIAL BALANCE AND CHARGE BALANCE ; 2.4 EFFECT OF GATE - BODY VOLTAGE ON SURFACE CONDITION ; 2.4.1 FLAT -BAND CONDITION ; 2.4.2 ACCUMULATION ; 2.4.3 DEPLETION AND INVERSION ; 2.4.4 GENERAL ANALYSIS ; 2.5 ACCUMULATION AND DEPLETION ; 2.6 INVERSION ; 2.6.1 GENERAL RELATIONS AND REGIONS OF INVERSION ; 2.6.2 STRONG INVERSION ; 2.6.3 WEAK INVERSION ; 2.6.4 MODERATE INVERSION ; 2.7 SMALL - SIGNAL CAPACITANCE ; 2.8 SUMMARY OF PROPERTIES OF THE REGIONS OF INVERSION ; REFERENCES ; PROBLEMS ; 3. : THE THREE TERMINAL MOS STRUCTURE ; 3.1 INTRODUCTION ; 3.2 CONTACTING THE INVERSION LAYER ; 3.3 THE BODY EFFECT ; 3.4 REGIONS OF INVERSION ; 3.4.1 APPROXIMATE LIMITS ; 3.4.2 STRONG INVERSION ; 3.4.3 WEAK INVERSION ; 3.5 A "CB CONTROL" POINT OF VIEW ; 3.5.1 FUNDAMENTALS ; 3.5.2 THE "PINCHOFF VOLTAGE" ; REFERENCES ; PROBLEMS ; 4. : THE FOUR - TERMINAL MOS TRANSISTOR ; 4.1 INTRODUCTION ; 4.2 TRANSISTOR REGIONS OF OPERATION ; 4.3 COMPLETE ALL - REGION MODEL ; 4.3.1 CURRENT EQUATIONS ; 4.4 SIMPLIFIED ALL - REGION MODELS ; 4.4.1 LINEARIZING THE DEPLETION REGION CHARGE ; 4.4.2 BODY -REFERENCED SIMPLIFIED ALL - REGION MODELS ; 4.4.3 SOURCE - REFERENCED SIMPLIFIED ALL - REGION MODELS ; 4.4.4 CHARGE FORMULATION OF SIMPLIFIED ALL-REGION MODELS ; 4.5 MODELS BASED ON QUASI - FERMI POTENTIALS ; 4.6 REGIONS OF INVERSION IN TERMS OF TERMINAL VOLTAGES ; 4.7 STRONG INVERSION ; 4.7.1 COMPLETE STRONG -INVERSION MODEL ; 4.7.2 BODY - REFERENCED SIMPLIFIED STRONG INVERSION MODEL ; 4.7.3 SOURCE - REFERENCED SIMPLIFIED STRONG - INVERSION MODEL ; 4.7.4 MODEL ORIGIN SUMMARY ; 4.8 WEAK INVERSION ; 4.8.1 SPECIAL CONDITIONS IN WEAK INVERSION ; 4.9 MODERATE INVERSION AND SINGLE - PIECE MODELS ; 4.10 SOURCE - REFERENCED VS. BODY - REFERENCED MODELING ; 4.11 EFFECTIVE MOBILITY ; 4.12 EFFECT OF EXTRINSIC SOURCE AND DRAIN SERIES RESISTANCES ; 4.13 TEMPERATURE EFFECTS ; 4.14 BREAKDOWN ; 4.15 THE P-CHANNEL MOS TRANSISTOR ; 4.16 ENHANCEMENT - MODE AND DEPLETION - MODE TRANSISTORS ; 4.17 MODEL PARAMETER VALUES, MODEL ACCURACY, AND MODEL COMPARISON ; REFERENCES ; PROBLEMS ; 5. : SMALL DIMENSION EFFECTS ; 5.1 INTRODUCTION ; 5.2 CARRIER VELOCITY SATURATION ; 5.3 CHANNEL LENGTH MODULATION ; 5.4 CHARGE SHARING ; 5.4.1 INTRODUCTION ; 5.4.2 SHORT - CHANNEL DEVICES ; 5.4.3 NARROW - CHANNEL DEVICES ; 5.4.4 LIMITATIONS OF CHARGE SHARING MODELS ; 5.5 DRAIN - INDUCED BARRIER LOWERING ; 5.6 PUNCHTHROUGH ; 5.7 COMBINING SEVERAL SMALL - DIMENSION EFFECTS INTO ONE MODEL - A STRONG INVERSION EXAMPLE ; 5.8 HOT CARRIER EFFECTS; IMPACT IONIZATION ; 5.9 VELOCITY OVERSHOOT AND BALLISTIC OPEATION ; 5.10 POLYSILICON DEPLETION ; 5.11 QUANTUM MECHANICAL EFFECTS ; 5.12 DC GATE CURRENT ; 5.13 JUNCTION LEAKAGE; BAND - TO - BAND TUNNELING; GIDL ; 5.14 LEAKAGE CURRENTS - EXAMPLES ; 5.15 THE QUEST FOR EVER - SMALLER DEVICES ; 5.15.1 INTRODUCTION ; 5.15.2 CLASSICAL SCALING ; 5.15.3 MODERN SCALING ; REFERENCES ; PROBLEMS ; 6. : THE MOS TRANSISTOR IN DYNAMIC OPERATION - LARGE SIGNAL MODELING ; 6.1 INTRODUCTION ; 6.2 QUASI - STATIC OPERATION ; 6.3 TERMINAL CURRENTS IN QUASI - STATIC OPERATION ; 6.4 EVALUATION OF INTRINSIC CHARGERS IN QUASI - STATIC OPERATION ; 6.4.1 INTRODUCTION ; 6.4.2 STRONG INVERSION ; 6.4.3 MODERATE INVERSION ; 6.4.4 WEAK INVERSION ; 6.4.5 ALL - REGION MODEL ; 6.4.6 DEPLETION AND ACCUMULATION ; 6.4.7 PLOTS OF CHARGERS VERSUS VGS ; 6.4.8 USE OF INTRINSIC CHARGERS IN EVALUATION THE TERMINAL CURRENTS ; 6.5 TRANSIT TIME UNDER DC CONDITIONS ; 6.6 LIMITATIONS OF THE QUASI - STATIC MODEL ; 6.7 NON - QUASI - STATIC MODELING ; 6.7.1 INTRODUCTION ; 6.7.2 THE CONTINUITY EQUATION ; 6.7.3 NON - QUASI - STATIC ANALYSIS ; 6.8 EXTRINSIC PARASITICS ; 6.8.1 EXTRINSIC CAPACITANCES ; 6.8.2 EXTRINSIC RESISTANCE ; 6.8.3 TEMPERATURE DEPENDENCE ; 6.8.4 SIMPLIFIED MODELS ; REFERENCES ; PROBLEMS ; 7. : SMALL - SIGNAL MODELING FOR LOW AND MEDIUM FREQUENCIES ; 7.1 INTRODUCTION ; 7.2 A LOW - FREQUENCY SMALL - SIGNAL MODEL FOR THE INTRINSIC PART ; 7.2.1 INTRODUCTION ; 7.2.2 SMALL - SIGNAL MODEL FOR THE DRAIN - SOURCE CURRENT ; 7.2.3 SMALL - SIGNAL MODEL FOR THE GATE AND BODY CURRENT ; 7.2.4 COMPLETE LOW - FREQUENCY SMALL - SIGNAL MODEL FOR THE INTRINSIC PART ; 7.2.5 STRONG INVERSION ; 7.2.6 WEAK INVERSION ; 7.2.7 MODERATE INVERSION ; 7.2.8 ALL - REGION MODELS ; 7.3 A MEDIUM - FREQUENCY SMALL - SIGNAL MODEL FOR THE INTRINSIC PART ; 7.3.1 INTRODUCTION ; 7.3.2 INTRINSIC CAPACITANCES ; 7.4 INCLUDING THE EXTRINSIC PART ; 7.5 NOISE ; 7.5.1 INTRODUCTION ; 7.5.2 WHITE NOISE ; 7.5.3 FLICKER NOISE ; 7.5.4 NOISE IN EXTRINSIC RESISTANCES ; 7.5.5. INCLUDING NOISE IN SMALL - SIGNAL CIRCUITS ; 7.6 ALL - REGION MODELS ; REFERENCES ; PROBLEMS ; 8. : HIGH FREQUENCY SMALL - SIGNALS MODELS ; 8.1 INTRODUCTION ; 8.2 A COMPLETE QUASI - STATIC MODEL ; 8.2.1 COMPLETE DESCRIPTION OF INTRINSIC CAPACITANCE EFFECTS ; 8.2.2 SMALL - SIGNAL EQUIVALENT CIRCUIT TOPOLOGIES ; 8.2.3 EVALUATION OF CAPACITANCES ; 8.2.4 FREQUENCY REGION OF VALIDITY ; 8.3 Y- PARAMETER MODELS ; 8.4 NON - QUASI - STATIC MODELS ; 8.4.1 INTRODUCTION ; 8.4.2 A NON - QUASI - STATIC STRONG - INVERSION MODEL ; 8.4.3 OTHER APPROXIMATION AND HIGHER - ODER MODELS ; 8.4.4 MODEL COMPARISON ; 8.5 HIGH - FREQUENCY NOISE ; 8.6 CONSIDERATION IN MOSFET MODELING FOR RF APPLICATIONS ; REFERENCES ; PROBLEMS ; 9. : SUBSTRATE NONUNIFORMITY AND STRUCTURAL EFFECTS ; 9.1 INTRODUCTION ; 9.2 ION IMPLANTATION AND SUBSTRATE NONUNIFORMITY ; 9.3 SUBSTRATE TRANSVERSE NONUNIFORMITY ; 9.3.1 PRELIMINARIES ; 9.3.2 THRESHOLD VOLTAGE ; 9.3.3 DRAIN CURRENT ; 9.3.4 BURIED CHANNEL DEVICES ; 9.4 SUBSTRATE LATERAL NONUNIFORMITY ; 9.5 WELL PROXIMITY EFFECT ; 9.6 STRESS EFFECTS ; 9.7 STATISTICAL VARIABILITY ; REFERENCES ; PROBLEMS ; 10. : MOSFET MODELING FOR CIRCUIT SIMULATION ; 10.1 INTRODUCTION ; 10.2 TYPES OF MODELS ; 10.2.1 MODELS FOR DEVICE ANALYSIS AND DESIGN ; 10.2.2 DEVICE MODELS FOR CIRCUIT SIMULATION ; 10.3 ATTRIBUTES OF GOOD COMPACT MODELS ; 10.4 MODEL FORMULATION ; 10.5 MODEL IMPLEMENTATION IN CIRCUIT SIMULATORS ; 10.6 MODEL TESTING ; 10.7 PARAMETER EXTRACTION ; 10.8 SIMULATION AND EXTRACTION FOR RF APPLICATIONS ; 10.9 COMMON MOSFET MODELS AVAILABLE IN CIRCUIT SIMULATORS ; 10.9.1 BSIM ; 10.9.2 EKV ; 10.9.3 HISIM2 ; 10.9.4 PSP ; REFERENCES ; PROBLEMS ; APPENDICES ; A. BASIC LAWS OF ELECTROSTATIC IN ONE DIMENSION ; B. QUASI - FERMI LEVELS AND CURRENTS ; C. GENERAL ANALYSIS OF THE TWO - TERMINAL MOS STRUCTURE ; D. CAREFUL DEFINITIONS FOR THE LIMITS OF MODERATE INVERSION ; E. GENERAL ANALYSIS OF THE THREE - TERMINAL MOS STRUCTURE ; F. DRAIN CURRENT FORMULATION USING QUASI - FERMI POTENTIALS ; G. MODELING BASED ON PINCHOFF VOLTAGE AND RELATED TOPICS ; H. EVALUATION OF THE INTRINSIC TRANSIENT SOURCE AND DRAIN CURRENT ; I. QUANTITIES USE IN THE DERIVATION OF THE NON-QUASI -STATIC Y-PARAMETER MODEL ; K. ANALYSIS OF BURIED CHANNEL DEVICES ; L. MOSFET MODEL BENCHMARK TESTS


Szczegóły: Operation and Modeling of the MOS Transistor 3e - Colin McAndrew, Yannis Tsividis

Tytuł: Operation and Modeling of the MOS Transistor 3e
Autor: Colin McAndrew, Yannis Tsividis
Producent: Oxford University Press
ISBN: 9780199829835
Rok produkcji: 2012
Ilość stron: 752
Oprawa: Twarda
Waga: 1.16 kg


Recenzje: Operation and Modeling of the MOS Transistor 3e - Colin McAndrew, Yannis Tsividis
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Operation and Modeling of the MOS Transistor 3e

,

Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor-the key element of modern microelectronic chips.1. : SEMICONDUCTORS, JUNCTIONS, AND MOSFET OVERVIEW ; 1.1 INTRODUCTION ; 1.2 SEMICONDUCTORS ; 1.2.1 INTRINSIC SEMICONDUCTORS, FREE ELECTRONS, AND HOLES ; 1.2.2 EXTRINSIC SEMICONDUCTORS ; 1.2.3 EQUILIBRIUM IN THE ABSENCE OF ELECTRIC FIELD ; 1.2.4 EQUILIBRIUM IN THE PRESENCE OF ELECTRIC FIELD ; 1.2.5 SEMICONDUCTORS IN NONEQUILIBRIUM; QUASI-FERMI LEVELS ; 1.2.6 RELATIONS BETWEEN CHARGE DENSITY, ELECTRIC FIELD, AND ; POTENTIALS; POISSON'S EQUATION ; 1.3 CONDUCTION ; 1.3.1 TRANSIT TIME ; 1.3.2 DRIFT ; 1.3.3 DIFFUSION ; 1.3.4 TOTAL CURRENT ; 1.4 CONTACT POTENTIALS ; 1.5 THEPN JUNCTION ; 1.6 OVERVIEW OF THE MOS TRANSISTORS ; 1.6.1 BASIC STRUCTURE ; 1.6.2 A QUALITATIVE DESCRIPTION OF MOS TRANSISTOR OPERATION ; 1.6.3 A FLUID DYNAMICAL ANALOG ; 1.6.4 MOS TRANSISTOR CHARACTERISTICS ; 1.7 FABRICATION PROCESSES AND DEVICE FEATURES ; 1.8 A BRIEF OVERVIEW OF THIS BOOK ; REFERENCES ; PROBLEMS ; 2. : THE TWO TERMINAL MOS STRUCTURE ; 2.1 INTRODUCTION ; 2.2 THE FLAT-BAND VOLTAGE ; 2.3 POTENTIAL BALANCE AND CHARGE BALANCE ; 2.4 EFFECT OF GATE - BODY VOLTAGE ON SURFACE CONDITION ; 2.4.1 FLAT -BAND CONDITION ; 2.4.2 ACCUMULATION ; 2.4.3 DEPLETION AND INVERSION ; 2.4.4 GENERAL ANALYSIS ; 2.5 ACCUMULATION AND DEPLETION ; 2.6 INVERSION ; 2.6.1 GENERAL RELATIONS AND REGIONS OF INVERSION ; 2.6.2 STRONG INVERSION ; 2.6.3 WEAK INVERSION ; 2.6.4 MODERATE INVERSION ; 2.7 SMALL - SIGNAL CAPACITANCE ; 2.8 SUMMARY OF PROPERTIES OF THE REGIONS OF INVERSION ; REFERENCES ; PROBLEMS ; 3. : THE THREE TERMINAL MOS STRUCTURE ; 3.1 INTRODUCTION ; 3.2 CONTACTING THE INVERSION LAYER ; 3.3 THE BODY EFFECT ; 3.4 REGIONS OF INVERSION ; 3.4.1 APPROXIMATE LIMITS ; 3.4.2 STRONG INVERSION ; 3.4.3 WEAK INVERSION ; 3.5 A "CB CONTROL" POINT OF VIEW ; 3.5.1 FUNDAMENTALS ; 3.5.2 THE "PINCHOFF VOLTAGE" ; REFERENCES ; PROBLEMS ; 4. : THE FOUR - TERMINAL MOS TRANSISTOR ; 4.1 INTRODUCTION ; 4.2 TRANSISTOR REGIONS OF OPERATION ; 4.3 COMPLETE ALL - REGION MODEL ; 4.3.1 CURRENT EQUATIONS ; 4.4 SIMPLIFIED ALL - REGION MODELS ; 4.4.1 LINEARIZING THE DEPLETION REGION CHARGE ; 4.4.2 BODY -REFERENCED SIMPLIFIED ALL - REGION MODELS ; 4.4.3 SOURCE - REFERENCED SIMPLIFIED ALL - REGION MODELS ; 4.4.4 CHARGE FORMULATION OF SIMPLIFIED ALL-REGION MODELS ; 4.5 MODELS BASED ON QUASI - FERMI POTENTIALS ; 4.6 REGIONS OF INVERSION IN TERMS OF TERMINAL VOLTAGES ; 4.7 STRONG INVERSION ; 4.7.1 COMPLETE STRONG -INVERSION MODEL ; 4.7.2 BODY - REFERENCED SIMPLIFIED STRONG INVERSION MODEL ; 4.7.3 SOURCE - REFERENCED SIMPLIFIED STRONG - INVERSION MODEL ; 4.7.4 MODEL ORIGIN SUMMARY ; 4.8 WEAK INVERSION ; 4.8.1 SPECIAL CONDITIONS IN WEAK INVERSION ; 4.9 MODERATE INVERSION AND SINGLE - PIECE MODELS ; 4.10 SOURCE - REFERENCED VS. BODY - REFERENCED MODELING ; 4.11 EFFECTIVE MOBILITY ; 4.12 EFFECT OF EXTRINSIC SOURCE AND DRAIN SERIES RESISTANCES ; 4.13 TEMPERATURE EFFECTS ; 4.14 BREAKDOWN ; 4.15 THE P-CHANNEL MOS TRANSISTOR ; 4.16 ENHANCEMENT - MODE AND DEPLETION - MODE TRANSISTORS ; 4.17 MODEL PARAMETER VALUES, MODEL ACCURACY, AND MODEL COMPARISON ; REFERENCES ; PROBLEMS ; 5. : SMALL DIMENSION EFFECTS ; 5.1 INTRODUCTION ; 5.2 CARRIER VELOCITY SATURATION ; 5.3 CHANNEL LENGTH MODULATION ; 5.4 CHARGE SHARING ; 5.4.1 INTRODUCTION ; 5.4.2 SHORT - CHANNEL DEVICES ; 5.4.3 NARROW - CHANNEL DEVICES ; 5.4.4 LIMITATIONS OF CHARGE SHARING MODELS ; 5.5 DRAIN - INDUCED BARRIER LOWERING ; 5.6 PUNCHTHROUGH ; 5.7 COMBINING SEVERAL SMALL - DIMENSION EFFECTS INTO ONE MODEL - A STRONG INVERSION EXAMPLE ; 5.8 HOT CARRIER EFFECTS; IMPACT IONIZATION ; 5.9 VELOCITY OVERSHOOT AND BALLISTIC OPEATION ; 5.10 POLYSILICON DEPLETION ; 5.11 QUANTUM MECHANICAL EFFECTS ; 5.12 DC GATE CURRENT ; 5.13 JUNCTION LEAKAGE; BAND - TO - BAND TUNNELING; GIDL ; 5.14 LEAKAGE CURRENTS - EXAMPLES ; 5.15 THE QUEST FOR EVER - SMALLER DEVICES ; 5.15.1 INTRODUCTION ; 5.15.2 CLASSICAL SCALING ; 5.15.3 MODERN SCALING ; REFERENCES ; PROBLEMS ; 6. : THE MOS TRANSISTOR IN DYNAMIC OPERATION - LARGE SIGNAL MODELING ; 6.1 INTRODUCTION ; 6.2 QUASI - STATIC OPERATION ; 6.3 TERMINAL CURRENTS IN QUASI - STATIC OPERATION ; 6.4 EVALUATION OF INTRINSIC CHARGERS IN QUASI - STATIC OPERATION ; 6.4.1 INTRODUCTION ; 6.4.2 STRONG INVERSION ; 6.4.3 MODERATE INVERSION ; 6.4.4 WEAK INVERSION ; 6.4.5 ALL - REGION MODEL ; 6.4.6 DEPLETION AND ACCUMULATION ; 6.4.7 PLOTS OF CHARGERS VERSUS VGS ; 6.4.8 USE OF INTRINSIC CHARGERS IN EVALUATION THE TERMINAL CURRENTS ; 6.5 TRANSIT TIME UNDER DC CONDITIONS ; 6.6 LIMITATIONS OF THE QUASI - STATIC MODEL ; 6.7 NON - QUASI - STATIC MODELING ; 6.7.1 INTRODUCTION ; 6.7.2 THE CONTINUITY EQUATION ; 6.7.3 NON - QUASI - STATIC ANALYSIS ; 6.8 EXTRINSIC PARASITICS ; 6.8.1 EXTRINSIC CAPACITANCES ; 6.8.2 EXTRINSIC RESISTANCE ; 6.8.3 TEMPERATURE DEPENDENCE ; 6.8.4 SIMPLIFIED MODELS ; REFERENCES ; PROBLEMS ; 7. : SMALL - SIGNAL MODELING FOR LOW AND MEDIUM FREQUENCIES ; 7.1 INTRODUCTION ; 7.2 A LOW - FREQUENCY SMALL - SIGNAL MODEL FOR THE INTRINSIC PART ; 7.2.1 INTRODUCTION ; 7.2.2 SMALL - SIGNAL MODEL FOR THE DRAIN - SOURCE CURRENT ; 7.2.3 SMALL - SIGNAL MODEL FOR THE GATE AND BODY CURRENT ; 7.2.4 COMPLETE LOW - FREQUENCY SMALL - SIGNAL MODEL FOR THE INTRINSIC PART ; 7.2.5 STRONG INVERSION ; 7.2.6 WEAK INVERSION ; 7.2.7 MODERATE INVERSION ; 7.2.8 ALL - REGION MODELS ; 7.3 A MEDIUM - FREQUENCY SMALL - SIGNAL MODEL FOR THE INTRINSIC PART ; 7.3.1 INTRODUCTION ; 7.3.2 INTRINSIC CAPACITANCES ; 7.4 INCLUDING THE EXTRINSIC PART ; 7.5 NOISE ; 7.5.1 INTRODUCTION ; 7.5.2 WHITE NOISE ; 7.5.3 FLICKER NOISE ; 7.5.4 NOISE IN EXTRINSIC RESISTANCES ; 7.5.5. INCLUDING NOISE IN SMALL - SIGNAL CIRCUITS ; 7.6 ALL - REGION MODELS ; REFERENCES ; PROBLEMS ; 8. : HIGH FREQUENCY SMALL - SIGNALS MODELS ; 8.1 INTRODUCTION ; 8.2 A COMPLETE QUASI - STATIC MODEL ; 8.2.1 COMPLETE DESCRIPTION OF INTRINSIC CAPACITANCE EFFECTS ; 8.2.2 SMALL - SIGNAL EQUIVALENT CIRCUIT TOPOLOGIES ; 8.2.3 EVALUATION OF CAPACITANCES ; 8.2.4 FREQUENCY REGION OF VALIDITY ; 8.3 Y- PARAMETER MODELS ; 8.4 NON - QUASI - STATIC MODELS ; 8.4.1 INTRODUCTION ; 8.4.2 A NON - QUASI - STATIC STRONG - INVERSION MODEL ; 8.4.3 OTHER APPROXIMATION AND HIGHER - ODER MODELS ; 8.4.4 MODEL COMPARISON ; 8.5 HIGH - FREQUENCY NOISE ; 8.6 CONSIDERATION IN MOSFET MODELING FOR RF APPLICATIONS ; REFERENCES ; PROBLEMS ; 9. : SUBSTRATE NONUNIFORMITY AND STRUCTURAL EFFECTS ; 9.1 INTRODUCTION ; 9.2 ION IMPLANTATION AND SUBSTRATE NONUNIFORMITY ; 9.3 SUBSTRATE TRANSVERSE NONUNIFORMITY ; 9.3.1 PRELIMINARIES ; 9.3.2 THRESHOLD VOLTAGE ; 9.3.3 DRAIN CURRENT ; 9.3.4 BURIED CHANNEL DEVICES ; 9.4 SUBSTRATE LATERAL NONUNIFORMITY ; 9.5 WELL PROXIMITY EFFECT ; 9.6 STRESS EFFECTS ; 9.7 STATISTICAL VARIABILITY ; REFERENCES ; PROBLEMS ; 10. : MOSFET MODELING FOR CIRCUIT SIMULATION ; 10.1 INTRODUCTION ; 10.2 TYPES OF MODELS ; 10.2.1 MODELS FOR DEVICE ANALYSIS AND DESIGN ; 10.2.2 DEVICE MODELS FOR CIRCUIT SIMULATION ; 10.3 ATTRIBUTES OF GOOD COMPACT MODELS ; 10.4 MODEL FORMULATION ; 10.5 MODEL IMPLEMENTATION IN CIRCUIT SIMULATORS ; 10.6 MODEL TESTING ; 10.7 PARAMETER EXTRACTION ; 10.8 SIMULATION AND EXTRACTION FOR RF APPLICATIONS ; 10.9 COMMON MOSFET MODELS AVAILABLE IN CIRCUIT SIMULATORS ; 10.9.1 BSIM ; 10.9.2 EKV ; 10.9.3 HISIM2 ; 10.9.4 PSP ; REFERENCES ; PROBLEMS ; APPENDICES ; A. BASIC LAWS OF ELECTROSTATIC IN ONE DIMENSION ; B. QUASI - FERMI LEVELS AND CURRENTS ; C. GENERAL ANALYSIS OF THE TWO - TERMINAL MOS STRUCTURE ; D. CAREFUL DEFINITIONS FOR THE LIMITS OF MODERATE INVERSION ; E. GENERAL ANALYSIS OF THE THREE - TERMINAL MOS STRUCTURE ; F. DRAIN CURRENT FORMULATION USING QUASI - FERMI POTENTIALS ; G. MODELING BASED ON PINCHOFF VOLTAGE AND RELATED TOPICS ; H. EVALUATION OF THE INTRINSIC TRANSIENT SOURCE AND DRAIN CURRENT ; I. QUANTITIES USE IN THE DERIVATION OF THE NON-QUASI -STATIC Y-PARAMETER MODEL ; K. ANALYSIS OF BURIED CHANNEL DEVICES ; L. MOSFET MODEL BENCHMARK TESTS

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Cena 308,00 PLN
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Szczegóły: Operation and Modeling of the MOS Transistor 3e - Colin McAndrew, Yannis Tsividis

Tytuł: Operation and Modeling of the MOS Transistor 3e
Autor: Colin McAndrew, Yannis Tsividis
Producent: Oxford University Press
ISBN: 9780199829835
Rok produkcji: 2012
Ilość stron: 752
Oprawa: Twarda
Waga: 1.16 kg


Recenzje: Operation and Modeling of the MOS Transistor 3e - Colin McAndrew, Yannis Tsividis

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